DSpace Kyoto University
Japanese | English 

Kyoto University Research Information Repository >
Graduate School of Engineering >
Journal Articles >

Access count of this item: 3

Please use this identifier to cite or link to this item: http://hdl.handle.net/2433/218240

Full text link:

File Description SizeFormat
1.4974500.pdf426.44 kBAdobe PDFView/Open
Title: Phonon frequencies of a highly strained AlN layer coherently grown on 6H-SiC (0001)
Authors: Kaneko, M.
Kimoto, T.
Suda, J.
Author's alias: 木本, 恒暢
須田, 淳
金子, 光顕
Issue Date: Jan-2017
Publisher: American Institute of Physics Inc.
Journal title: AIP Advances
Volume: 7
Issue: 1
Thesis number: 015105
Abstract: Phonon frequencies of a high-quality AlN layer coherently grown on a 6H-SiC (0001) substrate are investigated by Raman scattering. Owing to the largest strain in our coherent AlN layer among heteroepitaxially grown AlN layers ever reported, phonon frequencies of the E2 (low), E2 (high), and A1 (LO) modes are considerably shifted to 244.5 (−3.3, compared with bulk AlN), 672.1 (+16.3), and 899 (+11)cm−1, respectively. Full widths at half maximum of the phonon modes in the coherent AlN are almost equal to those of high-quality bulk AlN, clearly indicating its high crystalline quality and uniform strain. We discuss accuracy of phonon deformation potentials reported by several other groups thorough comparing our experimental results.
Rights: © 2017 Author(s). This article is distributed under a Creative Commons Attribution (CC BY) License.
URI: http://hdl.handle.net/2433/218240
DOI(Published Version): 10.1063/1.4974500
Appears in Collections:Journal Articles

Export to RefWorks

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.


Powered by DSpace 3.2.0 and JAIRO Crawler-List version 1.1
All items in KURENAI are protected by original copyright, with all rights reserved, unless otherwise indicated.