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ファイル | 記述 | サイズ | フォーマット | |
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j.nimb.2009.05.019.pdf | 184.68 kB | Adobe PDF | 見る/開く |
タイトル: | The emission process of secondary ions from solids bombarded with large gas cluster ions |
著者: | Ninomiya, Satoshi Ichiki, Kazuya Seki, Toshio https://orcid.org/0000-0002-0834-1657 (unconfirmed) Aoki, Takaaki https://orcid.org/0000-0002-5926-4903 (unconfirmed) Matsuo, Jiro https://orcid.org/0000-0003-0684-3677 (unconfirmed) |
著者名の別形: | 二宮, 啓 |
キーワード: | Ar cluster Secondary ion Si Si cluster TOF |
発行日: | Aug-2009 |
出版者: | Elsevier |
誌名: | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
巻: | 267 |
号: | 16 |
開始ページ: | 2601 |
終了ページ: | 2604 |
抄録: | We investigated the effects of size and energy of large incident Ar cluster ions on the secondary ion emission of Si. The secondary ions were measured using a double deflection method and a time-of-flight (TOF) technique. The size of the incident Ar cluster ions was between a few hundreds and several tens of thousands of atoms, and the energy up to 60 keV. Under the incidence of keV energy atomic Ar ions, atomic Si ions were mainly detected, and Si cluster ions were rarely observed. On the other hand, under the incidence of large Ar cluster ions, the dominant secondary ions were Sin + (2≤n≤11). It has become clear that the yield ratio of secondary Si cluster ions was determined by the velocity of the incident cluster ions, and this strong dependence of the yield ratio on incident velocity should be related to the mechanisms of secondary ion emission under large Ar cluster ion bombardment. |
著作権等: | c 2009 Elsevier B.V. All rights reserved. この論文は出版社版でありません。引用の際には出版社版をご確認ご利用ください。 This is not the published version. Please cite only the published version. |
URI: | http://hdl.handle.net/2433/85252 |
DOI(出版社版): | 10.1016/j.nimb.2009.05.019 |
出現コレクション: | 学術雑誌掲載論文等 |
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