ブラウズ : キーワード C face
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| 書誌情報 | ファイル |
|---|---|
| Fast epitaxial growth of high-purity 4H-SiC(000(1)over-bar) in a vertical hot-wall chemical vapor deposition Danno, K; Kimoto, T; Asano, K; Sugawara, Y; Matsunami, H (2005) JOURNAL OF ELECTRONIC MATERIALS, 34(4): 324-329 | |
| Improved surface morphology and background doping concentration in 4H-SiC(000-1) epitaxial growth by hot-wall CVD Wada, A; Kimoto, T; Nishikawa, K; Matsunami, H (2005) SILICON CARBIDE AND RELATED MATERIALS 2004, 483: 85-88 |