ブラウズ : キーワード avalanche breakdown
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| 書誌情報 | ファイル |
|---|---|
| Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation Negoro, Y; Miyamoto, N; Kimoto, T; Matsunami, H (2002) IEEE TRANSACTIONS ON ELECTRON DEVICES, 49(9): 1505-1510 | |
| High-voltage 4H-SiC pn diodes fabricated by p-type ion implantation Negoro, Y; Kimoto, T; Matsunami, H (2003) ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 86(12): 44-51 | |
| High-voltage SiC pn diodes with avalanche breakdown fabricated by aluminum or boron ion implantation Negoro, Y; Miyamoto, N; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 1273-1276 | |
| High-voltage SiC power devices for improved energy efficiency KIMOTO, Tsunenobu (2022-04-11) Proceedings of the Japan Academy, Series B, 98(4): 161-189 |  |