検索


適用済条件:
検索をやり直す
検索条件の追加:

検索条件を追加することで検索結果を絞り込むことができます。


検索結果表示: 1-10 / 160.
検索結果:
書誌情報ファイル
Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode
  Fujihira, K, Tamura, S, Kimoto, T, Matsunami, H (2002)
  IEEE TRANSACTIONS ON ELECTRON DEVICES, 49(1): 150-154
Selective homoepitaxy of 4H-SiC on (0001) and (1 1 (2)over-bar 0) masked substrates
  Chen, Y, Kimoto, T, Takeuchi, Y, Matsunami, H (2002)
  JOURNAL OF CRYSTAL GROWTH, 237: 1224-1229
High-purity and thick 4H-and 6H-SiC(0001) epitaxial growth by cold-wall chemical vapor deposition and high-voltage pin diodes
  Tamura, S, Fujihira, K, Kimoto, T, Matsunami, H (2001)
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40(4A): L319-L322
Effects of C/Si ratio in chemical vapor deposition of 4H-SiC(11(2)over-bar0) and (03(3)over-bar8)
  Kimoto, T, Hashimoto, K, Matsunami, H (2003)
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(12): 7294-7295
Source of surface morphological defects formed on 4H-SiC homoepitaxial films
  Okada, T, Ochi, K, Kawahara, H, Tomita, T, Matsuo, S, Yamaguchi, M, Higashimine, K, Kimoto, T (2006)
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(10A): 7625-7631
Epitaxial growth of 4H-SiC{0001} and reduction of deep levels
  Kimoto, T, Wada, K, Danno, K (2006)
  SUPERLATTICES AND MICROSTRUCTURES, 40(4-6): 225-232
Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons
  Danno, K, Kimoto, T (2006)
  JOURNAL OF APPLIED PHYSICS, 100(11)
Fast epitaxial growth of high-purity 4H-SiC(000(1)over-bar) in a vertical hot-wall chemical vapor deposition
  Danno, K, Kimoto, T, Asano, K, Sugawara, Y, Matsunami, H (2005)
  JOURNAL OF ELECTRONIC MATERIALS, 34(4): 324-329
Surface morphological structures of 4H-, 6H- and 15R-SiC (0001) epitaxial layers grown by chemical vapor deposition
  Kimoto, T, Chen, ZY, Tamura, S, Nakamura, S, Onojima, N, Matsunami, H (2001)
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 40(5A): 3315-3319
Experimental and theoretical investigations on short-channel effects in 4H-SiC MOSFETs
  Noborio, M, Kanzaki, Y, Suda, J, Kimoto, T (2005)
  IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(9): 1954-1962