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書誌情報ファイル
Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(03(3)over-bar8)
  Yano, H; Hirao, T; Kimoto, T; Matsunami, H; Shiomi, H (2002)
  APPLIED PHYSICS LETTERS, 81(25): 4772-4774
Formation of epitaxial mesa structures on 4H-SiC (0001) and (11(2)over-bar-0) substrates
  Chen, Y; Kimoto, T; Takeuchi, Y; Matsunami, H (2002)
  SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 255-258
SiC lateral super-junction diodes fabricated by epitaxial growth
  Miura, M; Nakamura, S; Suda, J; Kimoto, T; Matsunami, H (2002)
  SILICON CARBIDE AND RELATED MATERIALS - 2002, 433-4: 859-862
Rate-determining process in chemical vapor deposition of SiC on off-axis alpha-SiC (0001)
  Nakamura, S; Kimoto, T; Matsunami, H (2004)
  JOURNAL OF CRYSTAL GROWTH, 270(3-4): 455-461
Formation of deep pn junctions by MeV Al- and B-ion implantations into 4H-SiC and reverse characteristics
  Miyamoto, N; Saitoh, A; Kimoto, T; Matsunami, H; Hishida, Y; Watanabe, M (2000)
  SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 338-3: 1347-1350
Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation
  Negoro, Y; Miyamoto, N; Kimoto, T; Matsunami, H (2002)
  IEEE TRANSACTIONS ON ELECTRON DEVICES, 49(9): 1505-1510
Epitaxial growth of 4H-SiC(0 3 (3)over-bar 8) and control of MOS interface
  Kimoto, T; Hirao, T; Fujihira, K; Kosugi, H; Danno, K; Matsunami, H (2003)
  APPLIED SURFACE SCIENCE, 216(1-4): 497-501
Characterization of in-grown stacking faults in 4H-SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes
  Fujiwara, H; Kimoto, T; Tojo, T; Matsunami, H (2005)
  APPLIED PHYSICS LETTERS, 87(5)
High-sensitivity analysis of Z(1) center concentration in 4H-SiC grown by horizontal cold-wall chemical vapor deposition
  Nakamura, S; Kimoto, T; Matsunami, H (2002)
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 41(5A): 2987-2988
Epitaxy of nonpolar AlN on 4H-SiC (1-100) substrates
  Armitage, R; Suda, J; Kimoto, T (2006)
  APPLIED PHYSICS LETTERS, 88(1)