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書誌情報	ファイル
High-purity and high-quality 4H-SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition Fujihira, K; Kimoto, T; Matsunami, H (2002-03-04) Applied Physics Letters, 80(9): 1586-1588
High temperature deep level transient spectroscopy investigations of n-type 4H-SiC epitaxial layers Schoner, A; Fujihira, K; Kimoto, T; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS - 2002, 433-4: 387-390
Complete micropipe dissociation in 4H-SiC(03(3)over-bar8) epitaxial growth and its impact on reverse characteristics of Schottky barrier diodes Kimoto, T; Danno, K; Fujihira, K; Shiomi, H; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS - 2002, 433-4: 197-200
Recent achievements and future challenges in SiC homoepitaxial growth Kimoto, T; Nakazawa, S; Fujihira, K; Hirao, T; Nakamura, S; Chen, Y; Hashimoto, K; Matsunami, H (2002) SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3: 165-170
Epitaxial growth of 4H-SiC(0 3 (3)over-bar 8) and control of MOS interface Kimoto, T; Hirao, T; Fujihira, K; Kosugi, H; Danno, K; Matsunami, H (2003) APPLIED SURFACE SCIENCE, 216(1-4): 497-501
Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode Fujihira, K; Tamura, S; Kimoto, T; Matsunami, H (2002-01) IEEE TRANSACTIONS ON ELECTRON DEVICES, 49(1): 150-154
Growth and characterization of 4H-SiC in vertical hot-wall chemical vapor deposition Fujihira, K; Kimoto, T; Matsunami, H (2003) JOURNAL OF CRYSTAL GROWTH, 255(1-2): 136-144
Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode Fujihira, K; Tamura, S; Kimoto, T; Matsunami, H (2002) IEEE TRANSACTIONS ON ELECTRON DEVICES, 49(1): 150-154
High-purity and thick 4H-and 6H-SiC(0001) epitaxial growth by cold-wall chemical vapor deposition and high-voltage pin diodes Tamura, S; Fujihira, K; Kimoto, T; Matsunami, H (2001) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40(4A): L319-L322
High-purity and high-quality 4H-SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition Fujihira, K; Kimoto, T; Matsunami, H (2002) APPLIED PHYSICS LETTERS, 80(9): 1586-1588