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書誌情報ファイル
Design and Fabrication of RESURF MOSFETs on 4H-SiC(0001), (1120), and 6H-SiC(0001)
  Kimoto, T; Kosugi, H; Suda, J; Kanzaki, Y; Matsunami, H (2005)
  IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(1): 112-117
High-sensitivity analysis of Z(1) center concentration in 4H-SiC grown by horizontal cold-wall chemical vapor deposition
  Nakamura, S; Kimoto, T; Matsunami, H (2002)
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 41(5A): 2987-2988
Specular surface morphology of 4H-SiC epilayers grown on (1120) face
  Chen, ZY; Kimoto, T; Matsunami, H (1999)
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 38(12A): L1375-L1378
Experimental and theoretical investigations on short-channel effects in 4H-SiC MOSFETs
  Noborio, M; Kanzaki, Y; Suda, J; Kimoto, T (2005)
  IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(9): 1954-1962
Fabrication of SiC lateral super junction diodes with multiple stacking p- and n-layers
  Miura, M; Nakamura, S; Suda, J; Kimoto, T; Matsunami, H (2003)
  IEEE ELECTRON DEVICE LETTERS, 24(5): 321-323
Crystallographic defects under device-killing surface faults in a homoepitaxially grown film of SiC
  Okada, T; Kimoto, T; Yamai, K; Matsunami, H; Inoko, F (2003)
  MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 361(1-2): 67-74
Source of surface morphological defects formed on 4H-SiC homoepitaxial films
  Okada, T; Ochi, K; Kawahara, H; Tomita, T; Matsuo, S; Yamaguchi, M; Higashimine, K; Kimoto, T (2006)
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(10A): 7625-7631
1330 V, 67 m Omega center dot cm(2) 4H-SiC(0001) RESURF MOSFET
  Kimoto, T; Kawano, H; Suda, J (2005)
  IEEE ELECTRON DEVICE LETTERS, 26(9): 649-651
Epitaxial growth of 4H-SiC{0001} and reduction of deep levels
  Kimoto, T; Wada, K; Danno, K (2006)
  SUPERLATTICES AND MICROSTRUCTURES, 40(4-6): 225-232
Effect of C/Si ratio on spiral growth on 6H-SiC (0001)
  Nakamura, S; Kimoto, T; Matsunami, H (2003)
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 42(7B): L846-L848

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