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| 書誌情報 | ファイル |
|---|---|
| Copper nitride thin films prepared by radio-frequency reactive sputtering MARUYAMA, T; MORISHITA, T (1995-09-15) JOURNAL OF APPLIED PHYSICS, 78(6): 4104-4107 |  |
| Indium nitride thin films prepared by radio-frequency reactive sputtering MARUYAMA, T; MORISHITA, T (1994-11-15) JOURNAL OF APPLIED PHYSICS, 76(10): 5809-5812 | |
| Tin nitride thin films prepared by radio-frequency reactive sputtering MARUYAMA, T; MORISHITA, T (1995-06-15) JOURNAL OF APPLIED PHYSICS, 77(12): 6641-6645 | |
| Silicon dioxide thin films prepared by chemical vapor deposition from tetrakis(diethylamino)silane and ozone MARUYAMA, T; OHTANI, S (1994-05-23) APPLIED PHYSICS LETTERS, 64(21): 2800-2802 | |
| Germanium- and silicon-doped indium-oxide thin films prepared by radio-frequency magnetron sputtering MARUYAMA, T; TAGO, T (1994-03-14) APPLIED PHYSICS LETTERS, 64(11): 1395-1397 | |
| Electrochromic properties of niobium oxide thin films prepared by radio-frequency magnetron sputtering method MARUYAMA, T; ARAI, S (1993-08-16) APPLIED PHYSICS LETTERS, 63(7): 869-870 | |
| Fluorine-doped tin dioxide thin films prepared by chemical vapor deposition MARUYAMA, T; TABATA, K (1990-10-15) JOURNAL OF APPLIED PHYSICS, 68(8): 4282-4285 | |
| Fluorine-doped indium oxide thin films prepared by chemical vapor deposition MARUYAMA, T; NAKAI, T (1992-03-15) JOURNAL OF APPLIED PHYSICS, 71(6): 2915-2917 | |
| Indium-tin oxide thin films prepared by chemical vapor deposition MARUYAMA, T; FUKUI, K (1991-10-01) JOURNAL OF APPLIED PHYSICS, 70(7): 3848-3851 | |
| Photoluminescence of porous silicon exposed to ambient air MARUYAMA, T; OHTANI, S (1994-09-12) APPLIED PHYSICS LETTERS, 65(11): 1346-1348 | |