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書誌情報ファイル
Bandgap shift by quantum confinement effect in <100> Si-nanowires derived from threshold-voltage shift of fabricated metal-oxide-semiconductor field effect transistors and theoretical calculations
  Yoshioka, Hironori; Morioka, Naoya; Suda, Jun; Kimoto, Tsunenobu (2011-03-15)
  JOURNAL OF APPLIED PHYSICS, 109(6)
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Quantum-confinement effect on holes in silicon nanowires: Relationship between wave function and band structure
  Morioka, Naoya; Yoshioka, Hironori; Suda, Jun; Kimoto, Tsunenobu (2011-03)
  Journal of Applied Physics, 109(6)
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Mobility oscillation by one-dimensional quantum confinement in Si-nanowire metal-oxide-semiconductor field effect transistors
  Yoshioka, Hironori; Morioka, Naoya; Suda, Jun; Kimoto, Tsunenobu (2009-08)
  JOURNAL OF APPLIED PHYSICS, 106(3)
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Mobility oscillation by one-dimensional quantum confinement in Si-nanowire metal-oxide-semiconductor field effect transistors
  Yoshioka, Hironori; Morioka, Naoya; Suda, Jun; Kimoto, Tsunenobu (2009)
  JOURNAL OF APPLIED PHYSICS, 106(3)

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