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| Title: | Enhanced Drain Current of 4H-SiC MOSFETs by Adopting a Three-Dimensional Gate Structure |
| Authors: | Nanen, Yuichiro Yoshioka, Hironori Noborio, Masato Suda, Jun Kimoto, Tsunenobu    https://orcid.org/0000-0002-6649-2090 (unconfirmed) |
| Keywords: | Metal-oxide-semiconductor field-effect transistor (MOSFET) multigate FET (MuGFET) silicon carbide (SiC) 3-D gate structure |
| Issue Date: | 2009 |
| Publisher: | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| Journal title: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
| Volume: | 56 |
| Issue: | 11 |
| Start page: | 2632 |
| End page: | 2637 |
| URI: | http://hdl.handle.net/2433/109594 |
| DOI(Published Version): | 10.1109/TED.2009.2030437 |
| Link: | Web of Science |
| Appears in Collections: | Graduate School of Engineering Literature Database |
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