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| Title: | P-Channel MOSFETs on 4H-SiC {0001} and Nonbasal Faces Fabricated by Oxide Deposition and N2O Annealing |
| Authors: | Noborio, Masato Suda, Jun Kimoto, Tsunenobu    https://orcid.org/0000-0002-6649-2090 (unconfirmed) |
| Keywords: | Channel mobility deposited oxide interface state density metal-oxide-semiconductor field-effect transistor (MOSFET) p-channel silicon carbide (SiC) (000(1)over-bar) (03(3)over-bar8) (11(2)over-bar0) |
| Issue Date: | 2009 |
| Publisher: | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| Journal title: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
| Volume: | 56 |
| Issue: | 9 |
| Start page: | 1953 |
| End page: | 1958 |
| URI: | http://hdl.handle.net/2433/109601 |
| DOI(Published Version): | 10.1109/TED.2009.2025909 |
| Link: | Web of Science |
| Appears in Collections: | Graduate School of Engineering Literature Database |
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