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| Title: | Detection and depth analyses of deep levels generated by ion implantation in n- and p-type 4H-SiC |
| Authors: | Kawahara, Koutarou Alfieri, Giovanni Kimoto, Tsunenobu    https://orcid.org/0000-0002-6649-2090 (unconfirmed) |
| Keywords: | aluminium annealing deep level transient spectroscopy deep levels energy gap high-temperature effects ion implantation nitrogen phosphorus semiconductor growth silicon compounds wide band gap semiconductors |
| Issue Date: | 2009 |
| Publisher: | AMER INST PHYSICS |
| Journal title: | JOURNAL OF APPLIED PHYSICS |
| Volume: | 106 |
| Issue: | 1 |
| Thesis number: | 013719 |
| URI: | http://hdl.handle.net/2433/109604 |
| DOI(Published Version): | 10.1063/1.3159901 |
| Link: | Web of Science |
| Appears in Collections: | Graduate School of Engineering Literature Database |
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