P-Channel MOSFETs on 4H-SiC {0001} and Nonbasal Faces Fabricated by Oxide Deposition and N2O Annealing

Abstract

In this paper, we have investigated 4H-SiC p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with deposited SiO2 followed by N2O annealing. In addition to deposited oxides, dry-O2-grown oxides and N2O-grown oxides were also adopted as the gate oxides of SiC p-channel MOSFETs. The MOSFETs have been fabricated on the 4H-SiC (0001), (0001macr), (033macr8), and (112macr0) faces. The (0001) MOSFETs with deposited oxides exhibited a relatively high channel mobility of 10 cm2/V ldr s, although a mobility of 7 cm2/V ldr s was obtained in the (0001) MOSFETs with N2O-grown oxides. The channel mobility was also increased by utilizing the deposited SiO2 in the MOSFETs fabricated on nonbasal faces, although the MOSFETs on (0001macr) were not operational. Compared with the thermally grown oxides, the deposited oxides annealed in N2O are effective in improving the performance of 4H-SiC p-channel MOSFETs.