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タイトル: | Optical anisotropy in [0001]-oriented AlxGa1-xN/AlN quantum wells (x > 0.69) |
著者: | Banal, R. G. Funato, M. https://orcid.org/0000-0002-5455-3757 (unconfirmed) Kawakami, Y. https://orcid.org/0000-0003-3752-1507 (unconfirmed) |
キーワード: | aluminium compounds gallium compounds III-V semiconductors photoluminescence semiconductor quantum wells valence bands |
発行日: | Mar-2009 |
出版者: | American Physical Society |
誌名: | PHYSICAL REVIEW B |
巻: | 79 |
号: | 12 |
論文番号: | 121308 |
抄録: | The optical polarization in [0001]-oriented AlxGa1−xN/AlN multiple quantum wells (QWs) in the deep-ultraviolet region (x>0.69) was studied. Photoluminescence spectroscopy performed at 8.5 K revealed that the predominant polarization direction in QWs with a well width of ∼1.5 nm switched from GaN-like E⊥[0001] to AlN-like E∥[0001] at an Al composition x of ∼0.83, where E is the electric field vector of emitted light. This Al composition is much higher than the previously reported critical compositions for polarization switching phenomena. Furthermore, decreasing the well width from more than 10 to 1.5 nm promoted E⊥[0001] polarization. These results can be explained by the effect of strain and quantum confinement on the valence-band structures. |
著作権等: | © 2009 The American Physical Society |
URI: | http://hdl.handle.net/2433/109850 |
DOI(出版社版): | 10.1103/PhysRevB.79.121308 |
関連リンク: | http://link.aps.org/doi/10.1103/PhysRevB.79.121308 |
出現コレクション: | 学術雑誌掲載論文等 |
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