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| ファイル | 記述 | サイズ | フォーマット | |
|---|---|---|---|---|
| 1.3243086.pdf | 133.79 kB | Adobe PDF | 見る/開く |
| タイトル: | Thermal stability of deep levels between room temperature and 1500 degrees C in as-grown 3C-SiC |
| 著者: | Alfieri, G. Nagasawa, H. Kimoto, T.    https://orcid.org/0000-0002-6649-2090 (unconfirmed) |
| 発行日: | Oct-2009 |
| 出版者: | American Institute of Physics |
| 誌名: | JOURNAL OF APPLIED PHYSICS |
| 巻: | 106 |
| 号: | 7 |
| 論文番号: | 073721 |
| 抄録: | We report on the thermal stability of deep levels detected in as-grown bulk 3C-SiC. The investigation was performed by Fourier-transform deep level transient spectroscopy and an isochronal annealing series was carried out in the 100–1500 °C temperature range. We found three traps located between 0.14–0.50 eV below the conduction band edge minimum (EC). The shallower trap anneals out at temperatures below 1200 °C while the others display a high thermal stability up to at least 1500 °C. The nature of the former trap is discussed in detail on the basis of its annealing behavior and previous theoretical data found in the literature. |
| 著作権等: | Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in JOURNAL OF APPLIED PHYSICS 106, 073721 (2009) and may be found at http://link.aip.org/link/JAPIAU/v106/i7/p073721/s1 |
| URI: | http://hdl.handle.net/2433/109892 |
| DOI(出版社版): | 10.1063/1.3243086 |
| 関連リンク: | http://link.aip.org/link/JAPIAU/v106/i7/p073721/s1 |
| 出現コレクション: | 学術雑誌掲載論文等 |
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