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Title: Study of plasma enhanced chemical vapor deposition of ZnO films by non-thermal plasma jet at atmospheric pressure
Authors: Ito, Yosuke  kyouindb  KAKEN_id  orcid (unconfirmed)
Sakai, Osamu
Tachibana, Kunihide
Author's alias: 伊藤, 陽介
Keywords: Zinc oxide
Plasma processing and deposition
Chemical vapor deposition
Fourier transform infrared spectroscopy (FTIR)
Issue Date: 30-Apr-2010
Publisher: Elsevier
Journal title: Thin Solid Films
Volume: 518
Issue: 13
Start page: 3513
End page: 3516
Abstract: Plasma enhanced chemical vapor deposition using a non-thermal plasma jet was applied to deposition of ZnO films. Using vaporized bis(octane-2, 4-dionato)zinc flow crossed by the plasma jet, the deposition rate was as high as several tens of nm/s. From the results of infrared spectra, the films deposited at the substrate temperature Tsub = 100 °C contained a significant amount of carbon residue, while the films prepared at Tsub = 250 °C showed less carbon fraction. The experimental results confirmed that the plasma jet decomposed bis(octane-2, 4-dionato)zinc in the gaseous phase and on the substrate, and that there should be the critical Tsub to form high-quality ZnO films in the range from 100 to 250 °C.
Rights: © 2010 Elsevier B.V.
この論文は出版社版でありません。引用の際には出版社版をご確認ご利用ください。This is not the published version. Please cite only the published version.
DOI(Published Version): 10.1016/j.tsf.2009.11.034
Appears in Collections:Journal Articles

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