|Title:||Study of plasma enhanced chemical vapor deposition of ZnO films by non-thermal plasma jet at atmospheric pressure|
|Authors:||Ito, Yosuke https://orcid.org/0000-0003-3245-3840 (unconfirmed)|
|Author's alias:||伊藤, 陽介|
Plasma processing and deposition
Chemical vapor deposition
Fourier transform infrared spectroscopy (FTIR)
|Journal title:||Thin Solid Films|
|Abstract:||Plasma enhanced chemical vapor deposition using a non-thermal plasma jet was applied to deposition of ZnO films. Using vaporized bis(octane-2, 4-dionato)zinc flow crossed by the plasma jet, the deposition rate was as high as several tens of nm/s. From the results of infrared spectra, the films deposited at the substrate temperature Tsub = 100 °C contained a significant amount of carbon residue, while the films prepared at Tsub = 250 °C showed less carbon fraction. The experimental results confirmed that the plasma jet decomposed bis(octane-2, 4-dionato)zinc in the gaseous phase and on the substrate, and that there should be the critical Tsub to form high-quality ZnO films in the range from 100 to 250 °C.|
|Rights:||© 2010 Elsevier B.V.|
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|Appears in Collections:||Journal Articles|
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