Downloads: 425
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 1.3469944.pdf | 604.48 kB | Adobe PDF | View/Open |
| Title: | Engineering the band gap of SiC nanotubes with a transverse electric field |
| Authors: | Alfieri, Giovanni Kimoto, T.    https://orcid.org/0000-0002-6649-2090 (unconfirmed) |
| Issue Date: | 26-Jul-2010 |
| Publisher: | American Institute of Physics |
| Journal title: | Applied Physics Letters |
| Volume: | 97 |
| Issue: | 4 |
| Thesis number: | 043108 |
| Abstract: | The effects of a transverse electric field, of intensities ranging from 0 to 0.20 V/Å, on the band gap width of SiC nanotubes (SiCNTs) are investigated by means of density functional theory. A decrease in the band gap width, as a function of the electric field, is observed and the mechanism for such reduction, as well as its dependence on the nanotube diameter, is analyzed. An empirical model to describe the field dependence of the band gap is also proposed. |
| Rights: | © 2010 American Institute of Physics |
| URI: | http://hdl.handle.net/2433/126719 |
| DOI(Published Version): | 10.1063/1.3469944 |
| Appears in Collections: | Journal Articles |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.