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| File | Description | Size | Format | |
|---|---|---|---|---|
| PhysRevB.82.201307.pdf | 327.64 kB | Adobe PDF | View/Open |
| Title: | Spin-polarized semiconductor surface states localized in subsurface layers |
| Authors: | Ohtsubo, Yoshiyuki Hatta, Shinichiro   https://orcid.org/0000-0001-5034-5187 (unconfirmed)Yaji, Koichiro Okuyama, Hiroshi  https://orcid.org/0000-0002-6031-0612 (unconfirmed)Miyamoto, Koji Okuda, Taichi Kimura, Akio Namatame, Hirofumi Taniguchi, Masaki Aruga, Tetsuya https://orcid.org/0000-0002-4276-0679 (unconfirmed) |
| Author's alias: | 有賀, 哲也 |
| Issue Date: | Nov-2010 |
| Publisher: | The American Physical Society |
| Journal title: | Physical Review B |
| Volume: | 82 |
| Issue: | 20 |
| Thesis number: | 201307(R) |
| Abstract: | A pair of different surface-state and surface-resonance bands has been identified on Bi/Ge(111)-(√3×√3)R30° by a combined experimental and computational study. The wave functions of the states have negligible amplitude at Bi atoms and are extended over more than 20 subsurface layers. These bands exhibit characteristic spin structure, which is ascribed to the combined Rashba and atomic spin-orbit interaction (SOI). Unlike previously known surface Rashba systems, the spin polarization is induced by SOI of a light element (Ge) with negligible contribution of a heavier one (Bi). |
| Rights: | © 2010 The American Physical Society |
| URI: | http://hdl.handle.net/2433/134560 |
| DOI(Published Version): | 10.1103/PhysRevB.82.201307 |
| Appears in Collections: | Journal Articles |
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