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dc.contributor.authorAlfieri, G.en
dc.contributor.authorKimoto, T.en
dc.date.accessioned2011-09-13T00:29:11Z-
dc.date.available2011-09-13T00:29:11Z-
dc.date.issued2010-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/2433/146888-
dc.language.isoeng-
dc.publisherAMER INST PHYSICSen
dc.subjectdensity functional theoryen
dc.subjectelectric field effectsen
dc.subjectenergy gapen
dc.subjectsemiconductor nanotubesen
dc.subjectsilicon compoundsen
dc.subjectwide band gap semiconductorsen
dc.titleEngineering the band gap of SiC nanotubes with a transverse electric fielden
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleAPPLIED PHYSICS LETTERSen
dc.identifier.volume97-
dc.identifier.issue4-
dc.relation.doi10.1063/1.3469944-
dc.textversionnone-
dc.identifier.artnum43108-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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