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dc.contributor.authorKawahara, Koutarouen
dc.contributor.authorKrieger, Michaelen
dc.contributor.authorSuda, Junen
dc.contributor.authorKimoto, Tsunenobuen
dc.date.accessioned2011-09-13T00:29:12Z-
dc.date.available2011-09-13T00:29:12Z-
dc.date.issued2010-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/2433/146889-
dc.language.isoeng-
dc.publisherAMER INST PHYSICSen
dc.titleDeep levels induced by reactive ion etching in n- and p-type 4H-SiCen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleJOURNAL OF APPLIED PHYSICSen
dc.identifier.volume108-
dc.identifier.issue2-
dc.relation.doi10.1063/1.3460636-
dc.textversionnone-
dc.identifier.artnum23706-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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