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| Title: | Deep levels induced by reactive ion etching in n- and p-type 4H-SiC |
| Authors: | Kawahara, Koutarou Krieger, Michael Suda, Jun Kimoto, Tsunenobu    https://orcid.org/0000-0002-6649-2090 (unconfirmed) |
| Issue Date: | 2010 |
| Publisher: | AMER INST PHYSICS |
| Journal title: | JOURNAL OF APPLIED PHYSICS |
| Volume: | 108 |
| Issue: | 2 |
| Thesis number: | 23706 |
| URI: | http://hdl.handle.net/2433/146889 |
| DOI(Published Version): | 10.1063/1.3460636 |
| Link: | Web of Science |
| Appears in Collections: | Graduate School of Engineering Literature Database |
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