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タイトル: | Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching |
著者: | Kawakami, Y. https://orcid.org/0000-0003-3752-1507 (unconfirmed) Kaneta, A. Su, L. Zhu, Y. Okamoto, K. Funato, M. https://orcid.org/0000-0002-5455-3757 (unconfirmed) Kikuchi, A. Kishino, K. |
キーワード: | etching gallium compounds III-V semiconductors indium compounds ion beam effects nanofabrication nanopatterning nanostructured materials optical microscopy photoluminescence semiconductor quantum wells stress relaxation wide band gap semiconductors |
発行日: | Jan-2010 |
出版者: | AMER INST PHYSICS |
誌名: | JOURNAL OF APPLIED PHYSICS |
巻: | 107 |
号: | 2 |
論文番号: | 023522 |
抄録: | The optical properties of InGaN/GaN quantum wells, which were nanopatterned into cylindrical shapes with diameters of 2μm, 1μm, or 500 nm by chemically assisted ion beam etching, were investigated. Photoluminescence (PL) and time-resolved PL measurements suggest inhomogeneous relaxation of the lattice-mismatch induced strain in the InGaN layers. By comparing to a strain distribution simulation, we found that partial stain relaxation occurs at the free side wall, but strain remains in the middle of the pillar structures. The strain relaxation leads to an enhanced radiative recombination rate by a factor of 4–8. On the other hand, nonradiative recombination processes are not strongly affected, even by postgrowth etching. Those characteristics are clearly reflected in the doughnut-shape emission patterns observed by optical microscopy. |
著作権等: | Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in JOURNAL OF APPLIED PHYSICS107, 023522 (2010) and may be found at |
URI: | http://hdl.handle.net/2433/147195 |
DOI(出版社版): | 10.1063/1.3280032 |
関連リンク: | http://link.aip.org/link/JAPIAU/v107/i2/p023522/s1 |
出現コレクション: | 学術雑誌掲載論文等 |
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