このアイテムのアクセス数: 441
このアイテムのファイル:
| ファイル | 記述 | サイズ | フォーマット | |
|---|---|---|---|---|
| 1.3502563.pdf | 409.89 kB | Adobe PDF | 見る/開く |
| タイトル: | Mechanism analysis of photoleakage current in ZnO thin-film transistors using device simulation |
| 著者: | Kimura, Mutsumi Kamada, Yudai Fujita, Shizuo    https://orcid.org/0000-0001-6384-6693 (unconfirmed)Hiramatsu, Takahiro Matsuda, Tokiyoshi Furuta, Mamoru Hirao, Takashi |
| 発行日: | Oct-2010 |
| 出版者: | AMER INST PHYSICS |
| 誌名: | APPLIED PHYSICS LETTERS |
| 巻: | 97 |
| 号: | 16 |
| 論文番号: | 163503 |
| 抄録: | We analyzed the photoleakage current (Ileak) in ZnO thin-film transistors using device simulation. The dependences of Ileak on the location of light irradiation and drain voltage are reproduced by considering a Schottky barrier at the source contact using a two-dimensional device simulation. First, carrier generation is induced by light irradiation, the generated holes accumulate near the source contact, and some of these are captured in the donor traps. Next, the Schottky barrier becomes narrow, and electron injection increases via a tunneling effect. This discussion also suggests that the off-current is exceedingly low because the Schottky barrier prevents electron injection. |
| 著作権等: | Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in APPLIED PHYSICS LETTERS 97, 163503 (2010) and may be found at https://doi.org/10.1063/1.3502563. |
| URI: | http://hdl.handle.net/2433/147205 |
| DOI(出版社版): | 10.1063/1.3502563 |
| 関連リンク: | http://link.aip.org/link/APPLAB/v97/i16/p163503/s1 |
| 出現コレクション: | 学術雑誌掲載論文等 |
このリポジトリに保管されているアイテムはすべて著作権により保護されています。