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Title: Semipolar {n[n¯]01} InGaN/GaN ridge quantum wells (n = 1−3) fabricated by a regrowth technique
Authors: Funato, Mitsuru  kyouindb  KAKEN_id
Kotani, Teruhisa
Kondou, Takeshi
Kawakami, Yoichi  kyouindb  KAKEN_id
Author's alias: 船戸, 充
Keywords: excitons
gallium compounds
III-V semiconductors
indium compounds
MOCVD
photoluminescence
radiative lifetimes
semiconductor growth
semiconductor quantum wells
time resolved spectra
vapour phase epitaxial growth
wide band gap semiconductors
Issue Date: Apr-2012
Publisher: American Institute of Physics
Journal title: Applied Physics Letters
Volume: 100
Issue: 16
Thesis number: 162107
Abstract: Semipolar {n[n¯]01} InGaN/GaN quantum wells (QWs) (n = 1−3) are fabricated on top of GaN microstructures, which consist of semipolar {1Ī01} facets. Semipolar planes are obtained via regrowth of three-dimensional structures on (0001) GaN templates under controlled growth conditions. Compared to QWs on {1Ī01} facets, {n[n¯]01} ridge QWs show an intense emission at ∼ 440 nm. Time resolved photoluminescence reveals that the radiative lifetime of excitons in {n[n¯]01} InGaN ridge QWs at 13 K is 310 ps, which is comparable to that in {1Ī01} QWs. The estimated internal quantum efficiency at room temperature is as high as 57%.
Rights: © 2012 American Institute of Physics.
URI: http://hdl.handle.net/2433/155465
DOI(Published Version): 10.1063/1.4704779
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