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14786435.2010.525540.pdf | 1.24 MB | Adobe PDF | 見る/開く |
タイトル: | Effect of impurities on the growth of {113} interstitial clusters in silicon under electron irradiation |
著者: | Nakai, K. Hamada, K. Satoh, Y. Yoshiie, T. |
著者名の別形: | 義家, 敏正 |
キーワード: | Czochralski grown silicon Czochralski grown silicon point defect interstitial cluster irradiation damage electron irradiation electron irradiation; |
発行日: | Jan-2011 |
出版者: | Taylor & Francis |
誌名: | Philosophical Magazine |
巻: | 91 |
号: | 3 |
開始ページ: | 421 |
終了ページ: | 436 |
抄録: | The growth and shrinkage of interstitial clusters on {113} planes were investigated in electron irradiated Czochralski grown silicon (Cz-Si), floating-zone silicon (Fz-Si), and impurity-doped Fz-Si (HT-Fz-Si) using a high voltage electron microscope. In Fz-Si, {113} interstitial clusters were formed only near the beam incident surface after a long incubation period, and shrank on subsequent irradiation from the backside of the specimen. In Cz-Si and HT-Fz-Si, {113} interstitial clusters nucleated uniformly throughout the specimen without incubation, and began to shrink under prolonged irradiation at higher electron beam intensity. At lower beam intensity, however, the {113} interstitial cluster grew stably. These results demonstrate that the {113} interstitial cluster cannot grow without a continuous supply of impurities during electron irradiation. Detailed kinetics of {113} interstitial cluster growth and shrinkage in silicon, including the effects of impurities, are proposed. Then, experimental results are analyzed using rate equations based on these kinetics. |
著作権等: | © 2011 Taylor & Francis This is not the published version. Please cite only the published version. この論文は出版社版でありません。引用の際には出版社版をご確認ご利用ください。 |
URI: | http://hdl.handle.net/2433/156520 |
DOI(出版社版): | 10.1080/14786435.2010.525540 |
出現コレクション: | 学術雑誌掲載論文等 |
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