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| ファイル | 記述 | サイズ | フォーマット | |
|---|---|---|---|---|
| 1.3604795.pdf | 559.04 kB | Adobe PDF | 見る/開く |
| タイトル: | Formation of a semi-insulating layer in n-type 4H-SiC by electron irradiation |
| 著者: | Kaneko, Hiromi Kimoto, Tsunenobu    https://orcid.org/0000-0002-6649-2090 (unconfirmed) |
| キーワード: | capacitance deep levels electrical resistivity electron beam effects electron traps Schottky barriers semiconductor epitaxial layers semiconductor growth silicon compounds wide band gap semiconductors Z-centres |
| 発行日: | 27-Jun-2011 |
| 出版者: | American Institute of Physics |
| 誌名: | APPLIED PHYSICS LETTERS |
| 巻: | 98 |
| 号: | 26 |
| 論文番号: | 262106 |
| 抄録: | Electron irradiation has been applied to the formation of a semi-insulating 4H-SiC(0001) layer. The resistivity of the semi-insulating layer, which was irradiated with a fluence of 1.9 × 10^[18] cm^[−2] at 400 keV, exceeded 10^[10] Ω cm at room temperature. From capacitance-voltage characteristics of Schottky structure, the depth of the semi-insulating layer was estimated to be 10 μm, indicating that the whole region of lightly-doped n-type epilayer was converted to the semi-insulating layer by electron irradiation. The semi-insulating property can be ascribed to electron trapping at the Z_[1/2] and EH_[6/7] centers generated by electron irradiation. The threshold energy for the generation of Z_[1/2] center was about 100 keV. |
| 著作権等: | Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in APPLIED PHYSICS LETTERS 98, 262106 (2011) and may be found at http://link.aip.org/link/?apl/98/262106 |
| URI: | http://hdl.handle.net/2433/160625 |
| DOI(出版社版): | 10.1063/1.3604795 |
| 関連リンク: | http://link.aip.org/link/?apl/98/262106 |
| 出現コレクション: | 学術雑誌掲載論文等 |
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