ダウンロード数: 522
このアイテムのファイル:
| ファイル | 記述 | サイズ | フォーマット | |
|---|---|---|---|---|
| 1.3551542.pdf | 1.03 MB | Adobe PDF | 見る/開く |
| タイトル: | Structural and electronic characterization of (2,3(3)) bar-shaped stacking fault in 4H-SiC epitaxial layers |
| 著者: | Camarda, Massimo Canino, Andrea La Magna, Antonino La Via, Francesco Feng, G. Kimoto, T.    https://orcid.org/0000-0002-6649-2090 (unconfirmed)Aoki, M. Kawanowa, H. |
| キーワード: | bars conduction bands defect states photoluminescence semiconductor epitaxial layers silicon compounds stacking faults transmission electron microscopy wide band gap semiconductors |
| 発行日: | Feb-2011 |
| 出版者: | American Institute of Physics |
| 誌名: | APPLIED PHYSICS LETTERS |
| 巻: | 98 |
| 号: | 5 |
| 論文番号: | 051915 |
| 抄録: | Crystallographic, electronic, and energetic analyses of the (2, 3_3) [or (2, 3, 3, 3) in the standard Zhadanov notation] bar-shaped stacking fault, observed in as-grown 4H-SiC epitaxial layers, are presented. The defect has been identified by means of spatially resolved microphotoluminescence (μ-PL) measurements at different emission wavelengths, focusing on the emission peak at 0.3 eV below the conduction band. Low temperature μ-PL measurements have also been performed. The defect has been identified and characterized using high resolution transmission electron microscopy. Experimental results are correlated and validated by the calculations of the Kohn–Sham electronic band structure and the defect formation energy. |
| 著作権等: | Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in APPLIED PHYSICS LETTERS 98, 051915 (2011) and may be found at http://link.aip.org/link/?apl/98/051915 |
| URI: | http://hdl.handle.net/2433/160627 |
| DOI(出版社版): | 10.1063/1.3551542 |
| 関連リンク: | http://link.aip.org/link/?apl/98/051915 |
| 出現コレクション: | 学術雑誌掲載論文等 |
このリポジトリに保管されているアイテムはすべて著作権により保護されています。