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| ファイル | 記述 | サイズ | フォーマット | |
|---|---|---|---|---|
| 1.3559612.pdf | 434.94 kB | Adobe PDF | 見る/開く |
| タイトル: | Resistive switching effects in single metallic tunneling junction with nanometer-scale gap |
| 著者: | Mizukami, Takahiro Miyato, Yuji Kobayashi, Kei    https://orcid.org/0000-0002-1409-6539 (unconfirmed)Matsushige, Kazumi Yamada, Hirofumi |
| キーワード: | anodes electrical resistivity electron beam lithography negative resistance platinum semiconductor-metal boundaries tunnelling |
| 発行日: | Feb-2011 |
| 出版者: | American Institute of Physics |
| 誌名: | APPLIED PHYSICS LETTERS |
| 巻: | 98 |
| 号: | 8 |
| 論文番号: | 083120 |
| 抄録: | We fabricated a single tunneling junction with a nanometer-scale gap between Pt electrodes. We found that the gap distance became smaller after a current sweep, which was presumably caused by the migration of the Pt atoms at the anode. The junction showed a reproducible negative differential resistance characteristic after reduction in the gap. The junction also showed resistive switching characteristics with a resistance ratio of over 100 by applying voltage of different waveforms. The tunneling area and gap distance for on/off-state were quantitatively estimated by fitting the measured characteristics to the simple model as 100 nm^2 and 0.8/1.2 nm, respectively. |
| 著作権等: | Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in APPLIED PHYSICS LETTERS 98, 083120 (2011) and may be found at http://link.aip.org/link/?apl/98/083120 |
| URI: | http://hdl.handle.net/2433/160628 |
| DOI(出版社版): | 10.1063/1.3559612 |
| 関連リンク: | http://link.aip.org/link/?apl/98/083120 |
| 出現コレクション: | 学術雑誌掲載論文等 |
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