ダウンロード数: 286
このアイテムのファイル:
ファイル | 記述 | サイズ | フォーマット | |
---|---|---|---|---|
1.3641976.pdf | 607.72 kB | Adobe PDF | 見る/開く |
タイトル: | Luminescence of black silicon fabricated by high-repetition rate femtosecond laser pulses |
著者: | Chen, Tao Si, Jinhai Hou, Xun Kanehira, Shingo Miura, Kiyotaka https://orcid.org/0000-0001-6199-7113 (unconfirmed) Hirao, Kazuyuki |
キーワード: | elemental semiconductors high-speed optical techniques nanofabrication photoluminescence radiation effects silicon |
発行日: | 1-Oct-2011 |
出版者: | American Institute of Physics |
誌名: | JOURNAL OF APPLIED PHYSICS |
巻: | 110 |
号: | 7 |
論文番号: | 073106 |
抄録: | We studied the photoluminescence (PL) from black silicon that was fabricated using an 800 nm, 250 kHz femtosecond laser in air. By changing the scan velocity and the fluence of the femtosecond laser, the formation of the PL band between the orange (600 nm) and red bands (near 680 nm) could be controlled. The red band PL from the photoinduced microstructures on the black silicon was observed even without annealing due to the thermal accumulation of high-repetition rate femtosecond laser pulses. The orange band PL was easily quenched under 532 nm cw laser irradiation, whereas the red band PL was more stable; this can be attributed to "defect luminescence" and "quantum confinement", respectively. |
著作権等: | Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in JOURNAL OF APPLIED PHYSICS 110, 073106 (2011) and may be found at http://link.aip.org/link/?jap/110/073106 |
URI: | http://hdl.handle.net/2433/160652 |
DOI(出版社版): | 10.1063/1.3641976 |
関連リンク: | http://link.aip.org/link/?jap/110/073106 |
出現コレクション: | 学術雑誌掲載論文等 |
このリポジトリに保管されているアイテムはすべて著作権により保護されています。