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タイトル: | Enhancement and control of carrier lifetimes in p-type 4H-SiC epilayers |
著者: | Hayashi, T. Asano, K. Suda, J. Kimoto, T. https://orcid.org/0000-0002-6649-2090 (unconfirmed) |
著者名の別形: | 林, 利彦 |
キーワード: | annealing carrier lifetime ion implantation oxidation passivation semiconductor growth silicon compounds wide band gap semiconductors |
発行日: | Sep-2012 |
出版者: | American Institute of Physics |
誌名: | Journal of Applied Physics |
巻: | 112 |
号: | 6 |
論文番号: | 064503 |
抄録: | Enhancement and control of carrier lifetimes in p-type 4H-SiC have been investigated. In this study, thermal oxidation and carbon ion implantation methods, both of which are effective for lifetime enhancement in n-type SiC, were attempted on 147-μm thick p-type 4H-SiC epilayers. Effects of surface passivation on carrier lifetimes were also investigated. The carrier lifetimes in p-type SiC could be enhanced from 0.9 μs (as-grown) to 2.6 μs by either thermal oxidation or carbon implantation and subsequent Ar annealing, although the improvement effect for the p-type epilayers was smaller than that for the n-type epilayers. After the lifetime enhancement, electron irradiation was performed to control the carrier lifetime. The distribution of carrier lifetimes in each irradiated region was rather uniform, along with successful lifetime control in the p-type epilayer in the range from 0.1 to 1.6 μs. |
著作権等: | © 2012 American Institute of Physics |
URI: | http://hdl.handle.net/2433/173659 |
DOI(出版社版): | 10.1063/1.4748315 |
出現コレクション: | 学術雑誌掲載論文等 |
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