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| ファイル | 記述 | サイズ | フォーマット | |
|---|---|---|---|---|
| PhysRevB.87.161204.pdf | 868.75 kB | Adobe PDF | 見る/開く |
| タイトル: | Huge electron-hole exchange interaction in aluminum nitride |
| 著者: | Ishii, Ryota    https://orcid.org/0000-0002-1413-4849 (unconfirmed)Funato, Mitsuru https://orcid.org/0000-0002-5455-3757 (unconfirmed)Kawakami, Yoichi https://orcid.org/0000-0003-3752-1507 (unconfirmed) |
| 著者名の別形: | 石井, 良太 |
| 発行日: | Apr-2013 |
| 出版者: | American Physical Society |
| 誌名: | Physical Review B |
| 巻: | 87 |
| 号: | 16 |
| 論文番号: | 161204 |
| 抄録: | Optical spectroscopy is performed for c-plane homoepitaxial aluminum nitride (AlN) films. The temperature dependence of the polarization-resolved photoluminescence spectra reveals the exciton fine structure. The experimental results demonstrate that the electron-hole exchange interaction energy (j) in AlN is j=6.8 meV, which is the largest value for typical III-V and II-VI compound semiconductors. We propose the effective interatomic distance as the criterion of the electron-hole exchange interaction energy, revealing a universal rule. This study should encourage potential applications of excitonic optoelectronic devices in nitride semiconductors similar to those using II-VI compound semiconductors. |
| 著作権等: | ©2013 American Physical Society |
| URI: | http://hdl.handle.net/2433/174057 |
| DOI(出版社版): | 10.1103/PhysRevB.87.161204 |
| 出現コレクション: | 学術雑誌掲載論文等 |
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