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Title: Huge electron-hole exchange interaction in aluminum nitride
Authors: Ishii, Ryota  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-1413-4849 (unconfirmed)
Funato, Mitsuru  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-5455-3757 (unconfirmed)
Kawakami, Yoichi  kyouindb  KAKEN_id
Author's alias: 石井, 良太
Issue Date: Apr-2013
Publisher: American Physical Society
Journal title: Physical Review B
Volume: 87
Issue: 16
Thesis number: 161204
Abstract: Optical spectroscopy is performed for c-plane homoepitaxial aluminum nitride (AlN) films. The temperature dependence of the polarization-resolved photoluminescence spectra reveals the exciton fine structure. The experimental results demonstrate that the electron-hole exchange interaction energy (j) in AlN is j=6.8 meV, which is the largest value for typical III-V and II-VI compound semiconductors. We propose the effective interatomic distance as the criterion of the electron-hole exchange interaction energy, revealing a universal rule. This study should encourage potential applications of excitonic optoelectronic devices in nitride semiconductors similar to those using II-VI compound semiconductors.
Rights: ©2013 American Physical Society
URI: http://hdl.handle.net/2433/174057
DOI(Published Version): 10.1103/PhysRevB.87.161204
Appears in Collections:Journal Articles

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