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| ファイル | 記述 | サイズ | フォーマット | |
|---|---|---|---|---|
| j.sna.2013.04.014.pdf | 777.81 kB | Adobe PDF | 見る/開く |
| タイトル: | Single-crystalline 4H-SiC micro cantilevers with a high quality factor |
| 著者: | Adachi, Kohei Watanabe, Naoki Okamoto, Hajime Yamaguchi, Hiroshi Kimoto, Tsunenobu    https://orcid.org/0000-0002-6649-2090 (unconfirmed)Suda, Jun |
| 著者名の別形: | 足立, 亘平 |
| キーワード: | MEMS Single-crystalline 4H-SiC Cantilever Quality factor Resonator |
| 発行日: | Aug-2013 |
| 出版者: | Elsevier B.V. |
| 誌名: | Sensors and Actuators A: Physical |
| 巻: | 197 |
| 開始ページ: | 122 |
| 終了ページ: | 125 |
| 抄録: | Single-crystalline 4H-SiC micro cantilevers were fabricated by doping-type selective electrochemical etching of 4H-SiC. Using this method, n-type 4H-SiC cantilevers were fabricated on a p-type 4H-SiC substrate, and resonance characteristics of the fabricated 4H-SiC cantilevers were investigated under a vacuum condition. The resonant frequencies agreed very well with the results of numerical simulations. The maximum quality factor in first-mode resonance of the 4H-SiC cantilevers was 230, 000. This is 10 times higher than the quality factor of conventional 3C-SiC cantilevers fabricated on an Si substrate. |
| 著作権等: | © 2013 Elsevier B.V. この論文は出版社版でありません。引用の際には出版社版をご確認ご利用ください。 This is not the published version. Please cite only the published version. |
| URI: | http://hdl.handle.net/2433/174329 |
| DOI(出版社版): | 10.1016/j.sna.2013.04.014 |
| 出現コレクション: | 学術雑誌掲載論文等 |
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