このアイテムのアクセス数: 555
このアイテムのファイル:
ファイル | 記述 | サイズ | フォーマット | |
---|---|---|---|---|
transinf.E96.D.303.pdf | 1.32 MB | Adobe PDF | 見る/開く |
タイトル: | Device-Parameter Estimation through IDDQ Signatures |
著者: | SHINTANI, Michihiro SATO, Takashi ![]() ![]() ![]() |
著者名の別形: | 新谷, 道広 佐藤, 高史 |
キーワード: | IDDQ testing statistical leakage current analysis Bayes' theorem |
発行日: | Feb-2013 |
出版者: | The Institute of Electronics, Information and Communication Engineers |
誌名: | IEICE Transactions on Information and Systems |
巻: | E96.D |
号: | 2 |
開始ページ: | 303 |
終了ページ: | 313 |
抄録: | We propose a novel technique for the estimation of device-parameters suitable for postfabrication performance compensation and adaptive delay testing, which are effective means to improve the yield and reliability of LSIs. The proposed technique is based on Bayes' theorem, in which the device-parameters of a chip, such as the threshold voltage of transistors, are estimated by current signatures obtained in a regular IDDQ testing framework. Neither additional circuit implementation nor additional measurement is required for the purpose of parameter estimation. Numerical experiments demonstrate that the proposed technique can achieve 10-mV accuracy in threshold voltage estimations. |
著作権等: | © 2013 The Institute of Electronics, Information and Communication Engineers |
URI: | http://hdl.handle.net/2433/178698 |
DOI(出版社版): | 10.1587/transinf.E96.D.303 |
関連リンク: | http://www.ieice.org/jpn/index.html |
出現コレクション: | 学術雑誌掲載論文等 |

このリポジトリに保管されているアイテムはすべて著作権により保護されています。