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タイトル: | First-principles study of Cl diffusion in cubic SiC |
著者: | Alfieri, G. Kimoto, T. ![]() ![]() ![]() |
発行日: | 3-Apr-2013 |
出版者: | AIP Publishing |
誌名: | Journal of Applied Physics |
巻: | 113 |
号: | 13 |
論文番号: | 133706 |
抄録: | Chlorine-based precursors allow the fast growth of thick SiC epilayers for fabricating high-voltage devices. Since it was demonstrated that epitaxial growth with a Cl-based chemistry can affect p-type doping, the issue of Cl diffusion SiC is technologically relevant therefore we present a first principles study of the migration mechanisms of Cl in cubic SiC. We first discuss the equilibrium structure of different Cl-related defect configurations (isolated interstitials and complex defects) which have either been reported in the literature or calculated in the present study. Following this analysis, we focus on two migration mechanisms: The interstitialcy and the vacancy-mediated mechanism. We found that Cl diffuses in SiC via a vacancy-mediated mechanism and the value of the diffusivity is estimated. |
著作権等: | © 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. |
URI: | http://hdl.handle.net/2433/187952 |
DOI(出版社版): | 10.1063/1.4799194 |
出現コレクション: | 学術雑誌掲載論文等 |

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