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タイトル: | Deep levels generated by thermal oxidation in p-type 4H-SiC |
著者: | Kawahara, Koutarou Suda, Jun ![]() Kimoto, Tsunenobu ![]() ![]() ![]() |
発行日: | 17-Jan-2013 |
出版者: | AIP Publishing |
誌名: | Journal of Applied Physics |
巻: | 113 |
号: | 3 |
論文番号: | 033705 |
抄録: | Thermal oxidation is an effective method to reduce deep levels, especially the Z[1∕2]-center ( Ec−0.67 eV ), which strongly suppresses carrier lifetimes in n-type 4H-SiC epilayers. The oxidation, however, simultaneously generates other deep levels, HK0 ( Ev+0.79 eV ) and HK2 ( Ev+0.98 eV ) centers, within the lower half of the bandgap of SiC, where the HK0 center is a dominant deep level with a concentration of about 1×10[13] cm[−3] after oxidation. By comparing deep levels observed in three sets of p-type 4H-SiC: oxidized, electron-irradiated, and C[+]- or Si[+]-implanted samples, we find that the HK0 and HK2 centers are complexes including carbon interstitials such as the di-carbon interstitial or di-carbon antisite. Other defects observed in p-type 4H-SiC after electron irradiation or after C[+]/Si[+] implantation are also studied. |
著作権等: | © 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. |
URI: | http://hdl.handle.net/2433/187956 |
DOI(出版社版): | 10.1063/1.4776240 |
出現コレクション: | 学術雑誌掲載論文等 |

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