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タイトル: Deep levels generated by thermal oxidation in p-type 4H-SiC
著者: Kawahara, Koutarou
Suda, Jun  KAKEN_id
Kimoto, Tsunenobu  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-6649-2090 (unconfirmed)
発行日: 17-Jan-2013
出版者: AIP Publishing
誌名: Journal of Applied Physics
巻: 113
号: 3
論文番号: 033705
抄録: Thermal oxidation is an effective method to reduce deep levels, especially the Z[1∕2]-center ( Ec−0.67 eV ), which strongly suppresses carrier lifetimes in n-type 4H-SiC epilayers. The oxidation, however, simultaneously generates other deep levels, HK0 ( Ev+0.79 eV ) and HK2 ( Ev+0.98 eV ) centers, within the lower half of the bandgap of SiC, where the HK0 center is a dominant deep level with a concentration of about 1×10[13] cm[−3] after oxidation. By comparing deep levels observed in three sets of p-type 4H-SiC: oxidized, electron-irradiated, and C[+]- or Si[+]-implanted samples, we find that the HK0 and HK2 centers are complexes including carbon interstitials such as the di-carbon interstitial or di-carbon antisite. Other defects observed in p-type 4H-SiC after electron irradiation or after C[+]/Si[+] implantation are also studied.
著作権等: © 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
URI: http://hdl.handle.net/2433/187956
DOI(出版社版): 10.1063/1.4776240
出現コレクション:学術雑誌掲載論文等

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