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Title: | Deep levels generated by thermal oxidation in p-type 4H-SiC |
Authors: | Kawahara, Koutarou Suda, Jun Kimoto, Tsunenobu https://orcid.org/0000-0002-6649-2090 (unconfirmed) |
Issue Date: | 17-Jan-2013 |
Publisher: | AIP Publishing |
Journal title: | Journal of Applied Physics |
Volume: | 113 |
Issue: | 3 |
Thesis number: | 033705 |
Abstract: | Thermal oxidation is an effective method to reduce deep levels, especially the Z[1∕2]-center ( Ec−0.67 eV ), which strongly suppresses carrier lifetimes in n-type 4H-SiC epilayers. The oxidation, however, simultaneously generates other deep levels, HK0 ( Ev+0.79 eV ) and HK2 ( Ev+0.98 eV ) centers, within the lower half of the bandgap of SiC, where the HK0 center is a dominant deep level with a concentration of about 1×10[13] cm[−3] after oxidation. By comparing deep levels observed in three sets of p-type 4H-SiC: oxidized, electron-irradiated, and C[+]- or Si[+]-implanted samples, we find that the HK0 and HK2 centers are complexes including carbon interstitials such as the di-carbon interstitial or di-carbon antisite. Other defects observed in p-type 4H-SiC after electron irradiation or after C[+]/Si[+] implantation are also studied. |
Rights: | © 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. |
URI: | http://hdl.handle.net/2433/187956 |
DOI(Published Version): | 10.1063/1.4776240 |
Appears in Collections: | Journal Articles |
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