Downloads: 162

Files in This Item:
File Description SizeFormat 
PhysRevB.87.041306.pdf439.75 kBAdobe PDFView/Open
Title: Strong optical polarization in nonpolar(1{1¯}00)AlxGa{1-x}N/AlN quantum wells
Authors: Funato, Mitsuru  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-5455-3757 (unconfirmed)
Matsuda, Kazuhisa
Banal, Ryan G.
Ishii, Ryota  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-1413-4849 (unconfirmed)
Kawakami, Yoichi  kyouindb  KAKEN_id
Issue Date: 25-Jan-2013
Publisher: American Physical Society
Journal title: Physical Review B
Volume: 87
Issue: 4
Thesis number: 041306
Abstract: The optical polarization properties in nonpolar (1{1¯}00) AlxGa{1−x}N/AlN quantum wells (QWs) are investigated over the full range of Al compositions. The k⋅p calculation predicts that the lowest energy optical transition in (1{1¯}00) AlxGa1−xN layers pseudomorphically grown on unstrained AlN is dipole allowed for the electric field vector parallel to the [0001] direction, and that the degree of polarization is hardly affected by the AlxGa{1−x}N QW width regardless of the Al composition. Experimentally, AlxGa{1−x}N/AlN QWs (0≤x≤0.81) are homoepitaxially grown on AlN substrates. Photoluminescence spectroscopy reveals that the emissions of all QWs, including GaN/AlN QWs, are strongly polarized along the [0001] direction. This result agrees with the theoretical prediction.
Rights: ©2013 American Physical Society
URI: http://hdl.handle.net/2433/188000
DOI(Published Version): 10.1103/PhysRevB.87.041306
Appears in Collections:Journal Articles

Show full item record

Export to RefWorks


Export Format: 


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.