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Title: 抵抗変化型メモリ用Pt/NiO/Pt素子におけるフィラメント形成領域の特定とその評価
Other Titles: Investigation on filamentary conduction paths formed in Pt/NiO/Pt resistive switching cells
Authors: 岩田, 達哉  KAKEN_name
西, 佑介  KAKEN_name
木本, 恒暢  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-6649-2090 (unconfirmed)
Author's alias: IWATA, Tatsuya
NISHI, Yusuke
KIMOTO, Tsunenobu
Keywords: 抵抗変化型メモリ
酸化ニッケル
Conductive-AFM
Issue Date: Dec-2011
Publisher: 一般社団法人 電子情報通信学会
Journal title: 電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス
Volume: 111
Issue: 357
Start page: 87
End page: 92
Abstract: Conductive-AFMを用いて, Pt/NiO/Pt抵抗変化素子に形成されたフィラメントを直接観察した.Pt/NiO/Pt素子をフォーミングしたところ, NiO薄膜の一部に変質領域(隆起あるいは陥没)がみられた.変質領域は直径約1μmであり, フィラメントはこの変質領域の周辺部に主に存在していることがわかった.ひとつの変質領域につき数本から10数本のフィラメントが存在する.その面積は典型的なもので2500nm^2であり, およそ200nm^2から20000nm^2の範囲の面積を有する, さらに, 低抵抗状態においては, 10mΩcmのオーダの抵抗率を有するフィラメントが主に電流を担っており, 抵抗値の違いはその面積および形状の変化に起因することが示唆された.
Filamentary conductive paths (filaments) formed in Pt/NiO/Pt cells have been directly observed by Conductive-AFM. After forming process, deformations on the surface of NiO thin films are observed. The deformations have been confirmed to be protrusions or depressions with the diameter of about 1μm. It is revealed that from several to more than ten filaments are preferentially distributed along the edge of a deformation. The area of a filament is typically 2500 nm^2, ranging approximately from 200 nm^2 to 20000 nm^2. In low-resistance state, current through the cells is dominated by the filaments with the resistivity of the order of 10mΩcm. It is also suggested that the variation of the resistance in low-resistance state originate from the changes in the area as well as the shape of the filaments.
Description: 本文データは学協会の許諾に基づきCiNiiから複製したものである
Rights: copyright ©2011 by IEICE
URI: http://hdl.handle.net/2433/193888
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