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Title: Formation mechanism of threading-dislocation array in AlN layers grown on 6H-SiC (0001) substrates with 3-bilayer-high surface steps
Authors: Okumura, Hironori
Kimoto, Tsunenobu  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-6649-2090 (unconfirmed)
Suda, Jun
Author's alias: 奥村, 宏典
Issue Date: 18-Aug-2014
Publisher: AIP Publishing
Journal title: Applied Physics Letters
Volume: 105
Issue: 7
Thesis number: 071603
Abstract: We grew AlN layers on 6H-SiC (0001) substrates with three Si-C bilayer high (0.75 nm) steps. In the AlN layers, most of the threading dislocations (TDs) were arranged in rows. The TD row consisted of arrays of a half-loop dislocation, which was formed by an AlN/SiC interfacial dislocation along the step edges of the SiC substrate surfaces and a TD pair at both ends. The configuration of the interfacial dislocation was highly relevant with two-dimensional AlN nuclei at the initial stage of growth. We concluded that the half-loop dislocation arrays were generated in the AlN nucleus coalescence over the SiC step edges.
Rights: © 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
URI: http://hdl.handle.net/2433/201403
DOI(Published Version): 10.1063/1.4892807
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