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Title: | Formation mechanism of threading-dislocation array in AlN layers grown on 6H-SiC (0001) substrates with 3-bilayer-high surface steps |
Authors: | Okumura, Hironori Kimoto, Tsunenobu https://orcid.org/0000-0002-6649-2090 (unconfirmed) Suda, Jun |
Author's alias: | 奥村, 宏典 |
Issue Date: | 18-Aug-2014 |
Publisher: | AIP Publishing |
Journal title: | Applied Physics Letters |
Volume: | 105 |
Issue: | 7 |
Thesis number: | 071603 |
Abstract: | We grew AlN layers on 6H-SiC (0001) substrates with three Si-C bilayer high (0.75 nm) steps. In the AlN layers, most of the threading dislocations (TDs) were arranged in rows. The TD row consisted of arrays of a half-loop dislocation, which was formed by an AlN/SiC interfacial dislocation along the step edges of the SiC substrate surfaces and a TD pair at both ends. The configuration of the interfacial dislocation was highly relevant with two-dimensional AlN nuclei at the initial stage of growth. We concluded that the half-loop dislocation arrays were generated in the AlN nucleus coalescence over the SiC step edges. |
Rights: | © 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. |
URI: | http://hdl.handle.net/2433/201403 |
DOI(Published Version): | 10.1063/1.4892807 |
Appears in Collections: | Journal Articles |
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