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Title: Adaptive Virtual Metrology Design for Semiconductor Dry Etching Process Through Locally Weighted Partial Least Squares
Authors: Hirai, Toshiya
Kano, Manabu  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-2325-1043 (unconfirmed)
Author's alias: 加納, 学
Keywords: equipment engineering system
just-in-time modeling
locally weighted regression
semiconductor process
virtual metrology
Issue Date: May-2015
Publisher: IEEE
Journal title: IEEE Transactions on Semiconductor Manufacturing
Volume: 28
Issue: 2
Start page: 137
End page: 144
Abstract: In semiconductor manufacturing processes, virtual metrology (VM) has been investigated as a promising tool to predict important characteristics of products. Although partial least squares (PLS) is a well-known modeling technique that can cope with collinearity and therefore applied to construction of VM, its prediction performance deteriorates due to changes in process characteristics. In particular, maintenance of equipment strongly affects the process characteristics and the prediction performance. In this paper, VM was developed by using locally weighted PLS (LW-PLS), which is a type of just-in-time modeling technique, and it was used to predict the etching conversion differential of an actual dry etching process. The industrial application results have shown that the developed VM based on LW-PLS is superior to the conventional VM based on the sequential update model and artificial neural network model. In particular, it has been confirmed that the LW-PLS-based VM can keep its high prediction performance even after the maintenance, i.e., replacement of parts.
Rights: © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
This is not the published version. Please cite only the published version.
この論文は出版社版でありません。引用の際には出版社版をご確認ご利用ください。
URI: http://hdl.handle.net/2433/201404
DOI(Published Version): 10.1109/TSM.2015.2409299
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