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| ファイル | 記述 | サイズ | フォーマット | |
|---|---|---|---|---|
| 1.4935567.pdf | 2.6 MB | Adobe PDF | 見る/開く |
| タイトル: | Screw dislocation-induced growth spirals as emissive exciton localization centers in Al-rich AlGaN/AlN quantum wells |
| 著者: | Funato, Mitsuru    https://orcid.org/0000-0002-5455-3757 (unconfirmed)Banal, Ryan G. Kawakami, Yoichi https://orcid.org/0000-0003-3752-1507 (unconfirmed) |
| 著者名の別形: | 船戸, 充 |
| 発行日: | 6-Nov-2015 |
| 出版者: | AIP Publishing |
| 誌名: | AIP Advances |
| 巻: | 5 |
| 号: | 11 |
| 論文番号: | 117115 |
| 抄録: | Screw dislocations in Al-rich AlGaN/AlN quantum wells cause growth spirals with an enhanced Ga incorporation, which create potential minima. Although screw dislocations and their surrounding potential minima suggest non-radiative recombination processes within growth spirals, in reality, screw dislocations are not major non-radiative sinks for carriers. Consequently, carriers localized within growth spirals recombine radiatively without being captured by non-radiative recombination centers, resulting in intense emissions from growth spirals. |
| 著作権等: | © 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. |
| URI: | http://hdl.handle.net/2433/207642 |
| DOI(出版社版): | 10.1063/1.4935567 |
| 出現コレクション: | 学術雑誌掲載論文等 |
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