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Title: Near-infrared–to–visible highly selective thermal emitters based on an intrinsic semiconductor
Authors: Asano, Takashi  kyouindb  KAKEN_id
Suemitsu, Masahiro
Hashimoto, Kohei
De Zoysa, Menaka  kyouindb  KAKEN_id
Shibahara, Tatsuya
Tsutsumi, Tatsunori
Noda, Susumu  kyouindb  KAKEN_id
Author's alias: 浅野, 卓
末光, 真大
野田, 進
Keywords: thermal emission control
near-infrared
visible
energy utilization efficiency
thermal emitter
intrinsic semiconductor
interband transition
electronic resonance
photonic resonance
Issue Date: 23-Dec-2016
Publisher: American Association for the Advancement of Science
Journal title: Science Advances
Volume: 2
Issue: 12
Thesis number: e1600499
Abstract: Control of the thermal emission spectra of emitters will result in improved energy utilization efficiency in a broad range of fields, including lighting, energy harvesting, and sensing. In particular, it is challenging to realize a highly selective thermal emitter in the near-infrared–to–visible range, in which unwanted thermal emission spectral components at longer wavelengths are significantly suppressed, whereas strong emission in the near-infrared–to–visible range is retained. To achieve this, we propose an emitter based on interband transitions in a nanostructured intrinsic semiconductor. The electron thermal fluctuations are first limited to the higher-frequency side of the spectrum, above the semiconductor bandgap, and are then enhanced by the photonic resonance of the structure. Theoretical calculations indicate that optimized intrinsic Si rod-array emitters with a rod radius of 105 nm can convert 59% of the input power into emission of wavelengths shorter than 1100 nm at 1400 K. It is also theoretically indicated that emitters with a rod radius of 190 nm can convert 84% of the input power into emission of <1800-nm wavelength at 1400 K. Experimentally, we fabricated a Si rod-array emitter that exhibited a high peak emissivity of 0.77 at a wavelength of 790 nm and a very low background emissivity of <0.02 to 0.05 at 1100 to 7000 nm, under operation at 1273 K. Use of a nanostructured intrinsic semiconductor that can withstand high temperatures is promising for the development of highly efficient thermal emitters operating in the near-infrared–to–visible range.
Description: 「熱エネルギー」を太陽電池が効率よく発電できる波長の「光」に変換することに初めて成功. 京都大学プレスリリース. 2016-12-27.
Rights: 2016 © The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).
URI: http://hdl.handle.net/2433/217701
DOI(Published Version): 10.1126/sciadv.1600499
Related Link: http://www.kyoto-u.ac.jp/ja/research/research_results/2016/161224_1.html
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