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タイトル: | Silicon electrodeposition in a water-soluble KF-KCl molten salt: Utilization of SiCl₄ as Si source |
著者: | Yasuda, Kouji Maeda, Kazuma Hagiwara, Rika ![]() ![]() Homma, Takayuki Nohira, Toshiyuki ![]() ![]() ![]() |
著者名の別形: | 安田, 幸司 萩原, 理加 野平, 俊之 |
キーワード: | Electrodeposition Molten salt Silicon Silicon Tetrachloride |
発行日: | 20-Dec-2016 |
出版者: | Electrochemical Society |
誌名: | Journal of The Electrochemical Society. |
巻: | 164 |
号: | 2 |
開始ページ: | D67 |
終了ページ: | D71 |
抄録: | The electrodeposition of Si was investigated in a molten KF–KCl salt mixture (eutectic composition, 45:55 mol%) after the introduction of SiCl(4) to demonstrate a new production method for solar cell substrates. Gaseous SiCl(4) was introduced directly into the molten salt at 1023 K by a vapor transport method using Ar as a carrier gas. The dissolution efficiency of SiCl(4) exceeded 80% even when a simple tube was used for bubbling. Galvanostatic electrolysis was conducted at 923 K on a Ag substrate at 155 mA cm(−2) for 20 min in the molten KF–KCl salt mixture after the dissolution of 2.30 mol% SiCl(4). Although a compact Si layer was formed, its smoothness was inferior to that obtained from the melt after the addition of K(2)SiF(6). The molar fraction of the fluoride anion is suggested as one of the factors affecting the morphology of the deposits. |
著作権等: | © The Author(s) 2016. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: oa@electrochem.org. |
URI: | http://hdl.handle.net/2433/230507 |
DOI(出版社版): | 10.1149/2.0641702jes |
出現コレクション: | 学術雑誌掲載論文等 |
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