このアイテムのアクセス数: 0

このアイテムのファイル:
ファイル 記述 サイズフォーマット 
1367-2630.aa936b.pdf1.81 MBAdobe PDF見る/開く
タイトル: Impact ionization dynamics in silicon by MV/cm THz fields
著者: Tarekegne, Abebe T
Hirori, Hideki
Tanaka, Koichiro
Iwaszczuk, Krzysztof
Jepsen, Peter U
著者名の別形: 廣理, 英基
田中, 耕一郎
発行日: 6-Dec-2017
出版者: IOP Publishing
誌名: New Journal of Physics
巻: 19
抄録: We investigate the dynamics of the impact ionization (IMI) process in silicon in extremely high fields in the MV/cm range and at low initial carrier concentrations; conditions that are not accessible with conventional transport measurements. We use ultrafast measurements with high-intensity terahertz pulses to show that IMI is significantly more efficient at lower than at higher initial carrier densities. Specifically, in the case of silicon with an intrinsic carrier concentration (~1010 cm−3), the carrier multiplication process can generate more than 108 electrons from just a single free electron. The photoexcited carrier density dependence of the IMI rate shows that with decreasing initial carrier density the rate increases and approaches the fundamental Okuto limit imposed by energy conservation.
著作権等: ©2017 The Author(s). Published by IOP Publishing Ltd on behalf of Deutsche Physikalische Gesellschaft. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
URI: http://hdl.handle.net/2433/234995
DOI(出版社版): 10.1088/1367-2630/aa936b
出現コレクション:学術雑誌掲載論文等

アイテムの詳細レコードを表示する

Export to RefWorks


出力フォーマット 


このリポジトリに保管されているアイテムはすべて著作権により保護されています。