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| 1347-4065_aae896.pdf | 543.4 kB | Adobe PDF | 見る/開く |
| タイトル: | Updated trade-off relationship between specific on-resistance and breakdown voltage in 4H-SiC{0001} unipolar devices |
| 著者: | Kimoto, Tsunenobu    https://orcid.org/0000-0002-6649-2090 (unconfirmed) |
| 著者名の別形: | 木本, 恒暢 |
| 発行日: | Jan-2019 |
| 出版者: | Institute of Physics Publishing |
| 誌名: | Japanese Journal of Applied Physics |
| 巻: | 58 |
| 論文番号: | 018002 |
| 抄録: | The minimum specific on-resistance of 4H-SiC{0001} unipolar devices as a function of the breakdown voltage was updated based on latest studies on intrinsic physical properties, such as impact ionization coefficients. Both punch-through (PT) and nonpunch-through (NPT) structures were considered, because a PT structure generally gives a lower on-resistance at a given breakdown voltage. The minimum specific on-resistance of 1 kV 4H-SiC devices can be as low as 0.20 mΩ cm² at room temperature. An analytical expression for the relationship between the specific on-resistance and breakdown voltage is given. |
| 著作権等: | © 2018 The Japan Society of Applied Physics. Content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. |
| URI: | http://hdl.handle.net/2433/236055 |
| DOI(出版社版): | 10.7567/1347-4065/aae896 |
| 出現コレクション: | 学術雑誌掲載論文等 |
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