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| ファイル | 記述 | サイズ | フォーマット | |
|---|---|---|---|---|
| JJAP.57.088002.pdf | 775.47 kB | Adobe PDF | 見る/開く |
| タイトル: | Analytical formula for temperature dependence of resistivity in p-type 4H-SiC with wide-range doping concentrations |
| 著者: | Asada, Satoshi Suda, Jun Kimoto, Tsunenobu    https://orcid.org/0000-0002-6649-2090 (unconfirmed) |
| 著者名の別形: | 浅田, 聡志 須田, 淳 木本, 恒暢 |
| 発行日: | 29-Jun-2018 |
| 出版者: | Japan Society of Applied Physics |
| 誌名: | Japanese Journal of Applied Physics |
| 巻: | 57 |
| 号: | 8 |
| 論文番号: | 088002 |
| 抄録: | Temperature dependence of resistivity from 250 to 900 K in p-type 4H-SiC with various doping concentrations (5.8 × 10¹⁴-7.1 × 10¹⁸ cm⁻³) was presented. The resistivity was obtained by the van der Pauw method in samples, whose doping concentrations were precisely determined in our previous work. From the experimental results, coefficients for a fitting formula with polynomial approximation were derived. We confirmed that the fitting formula can accurately estimate the resistivity of p-type SiC with wide-range doping concentrations. |
| 著作権等: | © 2018 The Japan Society of Applied Physics. Content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. |
| URI: | http://hdl.handle.net/2433/236134 |
| DOI(出版社版): | 10.7567/JJAP.57.088002 |
| 出現コレクション: | 学術雑誌掲載論文等 |
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