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Title: Growth and Electrical Properties of Epitaxial ZnO Films Prepared by Chemical Bath Deposition Using a Flow Reactor
Authors: Miyake, Masao  kyouindb  KAKEN_id
Yamamoto, Ken
Ikenoue, Takumi  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-3753-6453 (unconfirmed)
Hirato, Tetsuji  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0003-3030-1632 (unconfirmed)
Author's alias: 三宅, 正男
山本, 顕
池之上, 卓己
平藤, 哲司
Keywords: zinc oxide
chemical bath deposition
epitaxy
carrier concentration
mobility
Issue Date: 1-Nov-2018
Publisher: Japan Institute of Metals and Materials
Journal title: Materials Transactions
Volume: 59
Issue: 11
Start page: 1761
End page: 1766
Abstract: Deposition methods using aqueous solutions have been developed as cost-effective routes to form transparent ZnO semiconductor films. Chemical bath deposition (CBD) employing a solution of zinc nitrate and hexamethylenetetramine is one of the most popular methods to grow ZnO using aqueous solutions. However, the electrical properties of ZnO films grown by CBD have not been extensively studied. In this study, epitaxial ZnO films were prepared by CBD using a flow reactor under various deposition conditions, and the temperature and reactant concentrations required for the growth of a transparent ZnO film with a smooth surface were determined. The electrical properties of the transparent ZnO films were examined by resistivity and Hall effect measurements. The optimum flow rate of the reaction solution, leading to the fastest growth of ZnO, was also identified. The ZnO film grown at such flow rate exhibited the highest electrical mobility. The carrier concentration and mobility of the ZnO film grown under the optimized conditions were 1.2 × 10¹8 cm⁻³ and 21 cm² V⁻¹ s⁻¹, respectively.
Rights: © 2018 The Japan Institute of Metals and Materials
Publisher permitted to deposit this paper on this repository. 発行元の許可を得て登録しています.
URI: http://hdl.handle.net/2433/237647
DOI(Published Version): 10.2320/matertrans.M2018173
Appears in Collections:Journal Articles

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