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| ファイル | 記述 | サイズ | フォーマット | |
|---|---|---|---|---|
| pssa.201127385.pdf | 452.89 kB | Adobe PDF | 見る/開く |
| タイトル: | Preparation of Al‐doped ZnO films by aqueous solution process using a continuous circulation reactor |
| 著者: | Miyake, Masao    https://orcid.org/0000-0001-8208-4030 (unconfirmed)Fukui, Hiroshi Hirato, Tetsuji https://orcid.org/0000-0003-3030-1632 (unconfirmed) |
| 著者名の別形: | 三宅, 正男 福井, 宏史 平藤, 哲司 |
| キーワード: | carrier concentration impurity doping mobility zinc oxide |
| 発行日: | May-2012 |
| 出版者: | Wiley |
| 誌名: | Physica Status Solidi (A) Applications and Materials Science |
| 巻: | 209 |
| 号: | 5 |
| 開始ページ: | 945 |
| 終了ページ: | 948 |
| 抄録: | The fabrication of Al‐doped ZnO films by an aqueous solution process using a continuous circulation reactor was studied. By heating ZnO‐saturated ammonia solutions containing 2–10 mM Al(NO₃)₃ with pH 10.7 at 90 ℃ under ambient pressure, polycrystalline ZnO films with Al content of 1–2 at.% were deposited. The carrier concentration of ZnO films increased with increasing Al content, indicating that Al was successfully incorporated into the ZnO crystals. The Al‐doped ZnO films had carrier concentrations of 10¹⁹–10²º cm⁻³ and mobilities of 0.7–7 cm²/V/s after annealing at 300 ℃ in air. |
| 著作権等: | This is the peer reviewed version of the following article: [Physica Status Solidi (A), Volume209, Issue5, May 2012, Pages 945-948], which has been published in final form at https://doi.org/10.1002/pssa.201127385. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. The full-text file will be made open to the public on 25 April 2013 in accordance with publisher's 'Terms and Conditions for Self-Archiving'. この論文は出版社版でありません。引用の際には出版社版をご確認ご利用ください。 This is not the published version. Please cite only the published version. |
| URI: | http://hdl.handle.net/2433/237673 |
| DOI(出版社版): | 10.1002/pssa.201127385 |
| 出現コレクション: | 学術雑誌掲載論文等 |
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