このアイテムのアクセス数: 254
このアイテムのファイル:
| ファイル | 記述 | サイズ | フォーマット | |
|---|---|---|---|---|
| 1.5092436.pdf | 1.03 MB | Adobe PDF | 見る/開く |
| タイトル: | Ohmic InP/Si direct-bonded heterointerfaces |
| 著者: | Inoue, Ryoichi Tanabe, Katsuaki    https://orcid.org/0000-0002-0179-4872 (unconfirmed) |
| 著者名の別形: | 井上, 諒一 田辺, 克明 |
| 発行日: | 13-May-2019 |
| 出版者: | American Institute of Physics Inc. |
| 誌名: | Applied Physics Letters |
| 巻: | 114 |
| 論文番号: | 191101 |
| 抄録: | Directly bonded ohmic InP/Si heterostructures are realized, overcoming the large (8%) lattice mismatch. By employing proper semiconductor surface pretreatments including cleaning and oxide removal, we obtain ohmic interfacial electrical characteristics at a bonding temperature as low as 200 °C. Among the doping-polarity combinations, ohmic interfacial electrical characteristics are observed for n-InP/n-Si and n-InP/p-Si bonded heterointerfaces, but not for p-InP/p-Si and p-InP/n-Si pairs. We numerically explain this polarity dependence in terms of energy band connections across the InP/Si heterointerfaces. The highly conductive III–V/Si direct bonding technique developed in this study is applicable for various heterostructured optoelectronic devices, such as multijunction solar cells and photonic integrated circuits. |
| 著作権等: | This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 114, 191101 (2019) and may be found at https://doi.org/10.1063/1.5092436 The full-text file will be made open to the public on 13 May 2020 in accordance with publisher's 'Terms and Conditions for Self-Archiving'. |
| URI: | http://hdl.handle.net/2433/241675 |
| DOI(出版社版): | 10.1063/1.5092436 |
| 出現コレクション: | 学術雑誌掲載論文等 |
このリポジトリに保管されているアイテムはすべて著作権により保護されています。