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Title: | Electrical activation of high-concentration aluminum implanted in 4H-SiC |
Authors: | Negoro, Y Kimoto, T https://orcid.org/0000-0002-6649-2090 (unconfirmed) Matsunami, H Schmid, F Pensl, G |
Issue Date: | 1-Nov-2004 |
Publisher: | American Institute of Physics |
Citation: | Y. Negoro et al., J. Appl. Phys. 96, 4916-4922 (2004) |
Journal title: | Journal of Applied Physics |
Volume: | 96 |
Issue: | 9 |
Start page: | 4916 |
End page: | 4922 |
Rights: | Copyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. |
URI: | http://hdl.handle.net/2433/24194 |
DOI(Published Version): | 10.1063/1.1796518 |
Link: | Web of Science |
Related Link: | http://link.aip.org/link/?jap/96/4916 |
Appears in Collections: | Journal Articles |
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