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Title: Electrical activation of high-concentration aluminum implanted in 4H-SiC
Authors: Negoro, Y
Kimoto, T  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-6649-2090 (unconfirmed)
Matsunami, H
Schmid, F
Pensl, G
Issue Date: 1-Nov-2004
Publisher: American Institute of Physics
Citation: Y. Negoro et al., J. Appl. Phys. 96, 4916-4922 (2004)
Journal title: Journal of Applied Physics
Volume: 96
Issue: 9
Start page: 4916
End page: 4922
Rights: Copyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
URI: http://hdl.handle.net/2433/24194
DOI(Published Version): 10.1063/1.1796518
Link: Web of Science
Related Link: http://link.aip.org/link/?jap/96/4916
Appears in Collections:Journal Articles

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